GaAs-FET power amplifier

Product ID !!! Frequency range 2500 ... 2700 MHz Input power for P1dB min. 35 dBm Output P1dB min. 44 dBm (CW) Output P1dB min. 25 W (CW) Output P3dB typ. 44.7 dBm (CW) Output P3dB typ. 30 W (CW) Output power COFDM (1) min. 40 dBm Output power COFDM (1) min. 10 W Gain (small signal) typ. 10 dB, min. 9 dB Ripple (small signal) typ. +/- 1 dB Harmonic suppression typ. 60 dB @ 43 dBm IM3 (2) min. 50 dBc @ 37 dBm PEP IM3 (2) min. 44 dBc @ 40 dBm PEP Efficiency min. 25% @ 43 dBm (CW) Input matching (S11) min. 20 dB Turn-+5 ... 14 V DC Supply voltage +11 ... 14 V DC Current consumption @ P1dB typ. 6 A Detection prov. Performance yes (diode detector) Detection Rückl. Power yes (diode detector) Operating temperature (housing) -20 ... +55 ° C Input / impedance SMA female / 50 ohms Output / impedance SMA female / 50 ohms Milled aluminum housing Dimensions (mm) 130 x 60 x 20 Weight typ. 250 g (1) Measured with QAM 64, single carrier, EVM: 2% (2) Measured with 2-Tone, Frequency spacing: 1 MHz